AP15T25H-HF advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 250v lower gate charge r ds(on) 320m fast switching characteristics i d 8.7a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 drain current, v gs @ 10v a i d @t c =100 drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w p d @t a =25 total power dissipation 3 w t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 2 /w rthj-a 62.5 /w data & specifications subject to change without notice -55 to 150 1 maximum thermal resistance, junction-ambient (pcb mount) 3 2 parameter rating 250 8.7 5.6 34 62.5 -55 to 150 parameter + 20 storage temperature range halogen-free product 201311181 a p15t25 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-252 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. g d s g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 250 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =4a - - 320 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =4a - 7 - s i dss drain-source leakage current v ds =200v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =4a - 31 49.6 nc q gs gate-source charge v ds =200v - 5.5 - nc q gd gate-drain ("miller") charge v gs =10v - 13 - nc t d(on) turn-on delay time v dd =125v - 9 - ns t r rise time i d =4a - 10 - ns t d(off) turn-off delay time r g =3.3 -23- ns t f fall time v gs =10v - 9 - ns c iss input capacitance v gs =0v - 1250 2000 pf c oss output capacitance v ds =25v - 85 - pf c rss reverse transfer capacitance f=1.0mhz - 55 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =4a, v gs =0v - - 1.3 v t rr reverse recovery time i s =4a, v gs =0v, - 75 - ns q rr reverse recovery charge di/dt=100a/s - 210 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP15T25H-HF
ap15t25h-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =4a v gs =10v 0 4 8 12 16 0 8 16 24 32 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v 6.0v v gs =5.0v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) i d =250ua i d =1ma 0 4 8 12 16 20 0 4 8 12162024 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v gs =5.0v
AP15T25H-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. case temperature 4 0 400 800 1200 1600 2000 2400 0 40 80 120 160 200 240 280 320 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =200v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on) 0 2 4 6 8 10 12 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) 0 4 8 12 16 0246810 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
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